STD4N25T4 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
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STD4N25T4 Datasheet PDF : 10 Pages
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STD4N25
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symb ol
td(on)
tr
(di/ d t) o n
Qg
Qgs
Qgd
Parameter
Turn-on Time
Rise Time
Turn-on Current Slope
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Test Conditions
VDD = 125 V ID = 2 A
RG = 50 Ω
VGS = 10 V
(see test circuit, figure 3)
VDD = 200 V ID = 4 A
RG = 50 Ω
VGS = 10 V
(see test circuit, figure 5)
VDD = 200 V ID = 4 A VGS = 10 V
Min.
Typ.
30
60
220
20
6
6
Max.
45
90
30
Unit
ns
ns
A/µs
nC
nC
nC
SWITCHING OFF
Symb ol
tr(Vof f)
tf
tc
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 200 V ID = 4 A
RG = 50 Ω VGS = 10 V
(see test circuit, figure 5)
Min.
Typ.
35
20
60
Max.
50
30
90
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symb ol
Parameter
Test Conditions
IS D
I SDM(•)
Source-drain Current
Source-drain Current
(pulsed)
VSD (∗) Forward On Voltage
ISD = 4 A VGS = 0
trr
Reverse Recovery
Time
Qrr Reverse Recovery
Charge
ISD = 4 A di/dt = 100 A/µs
VDD = 100 V Tj = 150 oC
(see test circuit, figure 5)
IRRM Reverse Recovery
Current
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Min.
Typ.
Max.
4
16
Unit
A
A
1.5
V
160
ns
0.8
µC
10
A
Safe Operating Area
Thermal Impedance
3/10
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