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STD2N50T4 View Datasheet(PDF) - STMicroelectronics

Part Name
Description
View to exact match
STD2N50T4 Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
STD2N50
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
TYPE
STD2N50
VDSS
RDS(on)
ID
500 V < 5.5
2A
s TYPICAL RDS(on) = 4.5
s AVALANCHE RUGGED TECHNOLOGY
s 100% AVALANCHE TESTED
s REPETITIVE AVALANCHE DATA AT 100oC
s APPLICATION ORIENTED
CHARACTERIZATION
s THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX "-1")
s SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX "T4")
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLIES (SMPS)
s CHOPPER REGULATORS, CONVERTERS,
MOTOR CONTROL, LIGHTING FOR
INDUSTRIAL AND CONSUMER
ENVIRONMENT
3
2
1
IPAK
TO-251
(Suffix "-1")
3
1
DPAK
TO-252
(Suffix "T4")
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR Drain- gate Voltage (RGS = 20 k)
VGS Gate-source Voltage
ID
Drain Current (continuous) at Tc = 25 oC
ID
Drain Current (continuous) at Tc = 100 oC
IDM() Drain Current (pulsed)
Ptot Total Dissipation at Tc = 25 oC
Derating Factor
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
() Pulse width limited by safe operating area
December 1996
Value
500
500
± 20
2
1.25
8
45
0.36
-65 to 150
150
Unit
V
V
V
A
A
A
W
W/oC
oC
oC
1/10
 

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