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STD16NE10LT4 View Datasheet(PDF) - STMicroelectronics

Part Name
Description
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STD16NE10LT4 Datasheet PDF : 6 Pages
1 2 3 4 5 6
STD16NE10L
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
td(on)
tr
P ar am et e r
Turn-on Delay Time
Rise Time
Qg
Total Gate Charge
Q gs Gat e-Source Charge
Qgd Gat e-Drain Charge
Test Conditions
VDD = 50 V
ID = 8 A
RG = 4.7
VGS = 4.5 V
(Resistive Load, see fig. 3)
VDD = 80 V ID = 16 A VGS = 5 V
Min.
Typ.
40
80
24
5.5
11
Max.
32
Unit
ns
ns
nC
nC
nC
SWITCHING OFF
Symbo l
td(off)
tf
P ar am et e r
Turn-off Delay Time
Fall Time
tr (Voff)
tf
tc
Off-voltage Rise T ime
Fall Time
Cross-over Time
Test Conditions
VDD = 50 V
ID = 8 A
RG = 4.7
VGS = 4.5 V
(Resistive Load, see fig. 3)
VDD = 80 V
ID = 16 A
RG = 4.7
VGS = 4.5 V
(Induct ive Load, see fig. 5)
Min.
Typ.
45
12
12
17
35
Max.
Unit
ns
ns
ns
ns
ns
SOURCE DRAIN DIODE
Symbo l
P ar am et e r
Test Conditions
ISD
ISDM ()
Source-drain Current
Source-drain Current
( pu ls ed)
VSD () Forward On Voltage
ISD = 16 A VGS = 0
trr
Qrr
I R RM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
ISD = 16 A
VDD = 40 V
di/dt = 100 A/µs
Tj = 150 oC
(see test circuit, fig. 5)
() Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
() Pulse width limited by safe operating area
Min.
Typ.
100
300
6
Max.
16
64
1.5
Unit
A
A
V
ns
nC
A
3/6
 

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