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STD16NE10LT4 View Datasheet(PDF) - STMicroelectronics

Part Name
Description
View to exact match
STD16NE10LT4 Datasheet PDF : 6 Pages
1 2 3 4 5 6
®
STD16NE10L
N - CHANNEL 100V - 0.07 - 16A DPAK
STripFETPOWER MOSFET
TYPE
VDSS
RDS(o n)
ID
STD16NE10L 100 V < 0.10
16 A
s TYPICAL RDS(on) = 0.07
s AVALANCHE RUGGED TECHNOLOGY
s LOW GATE CHARGE
s HIGH CURRENT CAPABILITY
s 175 oC OPERATING TEMPERATURE
s LOW THRESHOLD DRIVE
s ADD SUFFIX ”T4” FOR ORDERING IN TAPE
& REEL
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique ”Single Feature
Size” strip-based process. The resulting transi-
stor shows extremely high packing density for low
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a re-
markable manufacturing reproducibility.
PRELIMINARY DATA
3
1
DPAK
TO-252
(Suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
s DC-DC & DC-AC CONVERTERS
s AUTOMOTIVE ENVIRONMENT
ABSOLUTE MAXIMUM RATINGS
S ymb ol
Parameter
VDS
VDGR
Drain-source Voltage (VGS = 0)
Drain- gate Voltage (RGS = 20 k)
VG S
ID
ID
IDM()
Ptot
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
Drain Current (pulsed)
T otal Dissipation at Tc = 25 oC
Derating Factor
dv/ dt (1) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
() Pulse width limited by safe operating area
Va l u e
100
100
± 20
16
11
64
55
0.36
7
-65 to 175
175
( 1) ISD 16A, di/dt 300 A/µs, VDD V(BR)DSS, Tj TJMAX
Unit
V
V
V
A
A
A
W
W /o C
V/ns
oC
oC
May 2000
1/6
 

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