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STD12NF06L View Datasheet(PDF) - STMicroelectronics
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STD12NF06L
N-channel 60V - 0.08Ω - 12A - DPAK - IPAK STripFET™ II Power MOSFET
STMicroelectronics
STD12NF06L Datasheet PDF : 14 Pages
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STD12NF06L
Electrical characteristics
Table 6. Source drain diode
Symbol
Parameter
Test conditions
I
SD
I
SDM
V
SD(1)
t
rr
Q
rr
I
RRM
Source-drain current
Source-drain current (pulsed)
Forward on voltage
I
SD
= 12A, V
GS
= 0
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 12A,
di/dt = 100A/µs,
V
DD
= 16V, T
J
= 150°C
Figure 14 on page 8
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
Min Typ. Max Unit
12 A
48 A
1.5 V
50
ns
65
µC
2.5
A
5/14
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