datasheetbank_Logo   データシート検索エンジンとフリーデータシート
部品番号  

STD10PF06 データシートの表示(PDF) - STMicroelectronics

部品番号コンポーネント説明メーカー
STD10PF06 P-CHANNEL 60V - 0.18 Ω - 10A IPAK/DPAK STripFET™ II POWER MOSFET ST-Microelectronics
STMicroelectronics ST-Microelectronics
STD10PF06 Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
STD10PF06
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
td(on)
Turn-on Delay Time
VDD = 30 V
ID = 5 A
20
ns
tr
Rise Time
RG = 4.7
VGS = 10 V
40
ns
(Resistive Load, Figure 3)
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD= 48 V ID= 10 A VGS= 10 V
16
21
nC
4
nC
6
nC
SWITCHING OFF
Symbol
Parameter
td(off)
tf
Turn-off Delay Time
Fall Time
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 30 V
ID = 5 A
RG = 4.7Ω,
VGS = 10 V
(Resistive Load, Figure 3)
Vclamp = 48 V
ID = 10 A
RG = 4.7Ω,
VGS = 10 V
(Inductive Load, Figure 5)
Min.
Typ.
40
10
10
17
30
Max.
Unit
ns
ns
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
ISDM ()
Source-drain Current
Source-drain Current (pulsed)
VSD (*) Forward On Voltage
ISD = 10 A
VGS = 0
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
(*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(•)Pulse width limited by safe operating area.
ISD = 10 A
di/dt = 100A/µs
VDD = 30 V
Tj = 150°C
(see test circuit, Figure 5)
Min.
Typ.
100
260
5.2
Max.
10
40
2.5
Unit
A
A
V
ns
µC
A
Safe Operating Area
Thermal Impedance
3/9
Direct download click here
 

Share Link : ST-Microelectronics
All Rights Reserved © datasheetbank.com 2014 - 2019 [ 個人情報 保護方針 ] [ リクエストデータシート ]