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STD10PF06 View Datasheet(PDF) - STMicroelectronics

Part Name
Description
View to exact match
STD10PF06 Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
STD10PF06
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max
3.75
Rthj-amb Thermal Resistance Junction-ambient
Max
100
Tl
Maximum Lead Temperature For Soldering Purpose
275
°C/W
°C/W
°C
AVALANCHE CHARACTERISTICS
Symbol
Parameter
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS
Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 25 V)
Max Value
10
125
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
V(BR)DSS Drain-source
ID = 250 µA, VGS = 0
60
V
Breakdown Voltage
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating TC = 125°C
1
µA
10
µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20V
±1
µA
ON (*)
Symbol
VGS(th)
RDS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
Test Conditions
VDS = VGS
ID = 250 µA
VGS = 10 V
ID = 5 A
Min.
2
Typ.
0.18
Max.
4
0.20
Unit
V
DYNAMIC
Symbol
gfs (*)
Ciss
Coss
Crss
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS = 25 V
ID=5 A
VDS = 25 V f = 1 MHz VGS = 0
Min.
2
Typ.
5
850
230
75
Max.
Unit
S
pF
pF
pF
2/9
 

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