datasheetbank_Logo   データシート検索エンジンとフリーデータシート
部品番号  

STD10PF06-1999 データシートの表示(PDF) - STMicroelectronics

部品番号コンポーネント説明メーカー
STD10PF06(1999) P-CHANNEL 60V - 0.18 Ω - 10A IPAK/DPAK STripFET™ II POWER MOSFET ST-Microelectronics
STMicroelectronics ST-Microelectronics
STD10PF06 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
STD10PF06
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
td(on)
tr
P ar am et e r
Turn-on Delay Time
Rise Time
Qg
Total Gate Charge
Q gs Gat e-Source Charge
Qgd Gat e-Drain Charge
Test Conditions
VDD = 30 V
ID = 6 A
RG = 4.7
VGS = 10 V
(Resistive Load, see fig. 3)
VDD = 48 V ID = 12 A VGS = 10 V
Min.
Typ.
20
40
Max.
Unit
ns
ns
16
21
nC
4
nC
6
nC
SWITCHING OFF
Symbo l
td(off)
tf
P ar am et e r
Turn-off Delay Time
Fall Time
tr (Voff)
tf
tc
Off-voltage Rise T ime
Fall Time
Cross-over Time
Test Conditions
VDD = 30 V
ID = 6 A
RG = 4.7
VGS = 10 V
(Resistive Load, see fig. 3)
VDD = 48 V
ID = 12 A
RG = 4.7
VGS = 10 V
(Induct ive Load, see fig. 5)
Min.
Typ.
40
10
Max.
Unit
ns
ns
10
ns
17
ns
30
ns
SOURCE DRAIN DIODE
Symbo l
ISD
ISDM ()
VSD ()
trr
Qrr
I R RM
P ar am et e r
Source-drain Current
Source-drain Current
( pu ls ed)
Forward On Voltage
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
Test Conditions
ISD = 10 A VGS = 0
ISD = 12 A
VDD = 30 V
di/dt = 100 A/µs
Tj = 150 oC
(see test circuit, fig. 5)
Min.
Typ.
Max.
10
40
2.5
100
260
5.2
Unit
A
A
V
ns
µC
A
() Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
() Pulse width limited by safe operating area
Safe Operating Area
Thermal Impedance
3/8
Direct download click here
 

Share Link : ST-Microelectronics
All Rights Reserved © datasheetbank.com 2014 - 2019 [ 個人情報 保護方針 ] [ リクエストデータシート ]