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I12NM50N View Datasheet(PDF) - STMicroelectronics

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Description
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I12NM50N Datasheet PDF : 18 Pages
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STB12NM50N - STD12NM50N - STF12NM50N - STP12NM50N
1
Electrical ratings
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VDS
Drain-source voltage (VGS = 0)
VGS
Gate-source voltage
ID
Drain current (continuous) at TC = 25°C
ID
IDM(2)
Drain current (continuous) at TC=100°C
Drain current (pulsed)
PTOT
dv/dt(3)
Total dissipation at TC = 25°C
Derating factor
Peak diode recovery voltage slope
VISO
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t=1s;TC=25°C)
TJ
Operating junction temperature
Tstg
Storage temperature
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. ISD 11A, di/dt 400A/µs, VDD =80%V(BR)DSS
Value
Unit
TO-220-D/D²PAK TO-220FP
500
± 25
11
6.7
44
100
0.8
15
11(1)
6.7(1)
44 (1)
25
0.2
V
V
A
A
A
W
W/°C
V/ns
--
2500
V
-55 to 150
°C
Table 2. Thermal data
Symbol
Parameter
Rthj-case
Rthj-a
Tl
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Maximum lead temperature for soldering
purpose
TO-220
D²PAK
Value
Unit
DPAK TO-220FP
1.25
62.5
100
5
°C/W
62.5 °C/W
300
°C
Table 3. Avalanche characteristics
Symbol
Parameter
Avalanche current, repetitive or not-repetitive
IAS
(pulse width limited by Tj Max)
Single pulse avalanche energy
EAS
(starting Tj=25°C, Id=Ias, Vdd=50V)
Value
Unit
5
A
350
mJ
3/18
 

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