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STP20NM505 View Datasheet(PDF) - STMicroelectronics

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Description
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STP20NM505 Datasheet PDF : 16 Pages
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1 Electrical ratings
STB20NM50-1 - STB20NM50 - STP20NM50 - STP20NM50FP
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VGS
Gate-Source Voltage
ID
Drain Current (continuous) at TC = 25°C
ID
Drain Current (continuous) at TC = 100°C
IDM Note 2 Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt Note 1 Peak Diode Recovery voltage slope
VISO
Insulation Withstand Volatge (DC)
Tj
Operating Junction Temperature
Tstg
Storage Temperature
Value
TO-220/D²PAK/I²PAK
TO-220FP
20
12.6
80
192
1.2
--
± 30
15
20 (Note 3)
12.6 (Note 3)
80 (Note 3)
45
0.36
2000
-65 to 150
Table 2. Thermal data
Rthj-case
Rthj-amb
Tl
Thermal Resistance Junction-case Max
Thermal Resistance Junction-amb Max
Maximum Lead Temperature For Soldering
Purpose
TO-220/D²PAK/I²PAK
0.65
62.5
300
TO-220FP
2.8
Table 3. Avalanche characteristics
Symbol
Parameter
IAR
Avalanche Current, repetitive or
Not-Repetitive (pulse width limited by Tj max)
Single Pulse Avalanche Energy
EAS
(starting Tj=25°C, ID=5A, VDD= 50V)
Max Value
10
650
Unit
V
A
A
A
W
W/°C
V/ns
V
°C
Unit
°C/W
°C/W
°C
Unit
A
mJ
2/16
 

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