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ST10F269Z1Q3 View Datasheet(PDF) - STMicroelectronics

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ST10F269Z1Q3 Datasheet PDF : 184 Pages
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ST10F269
5 - INTERNAL FLASH MEMORY
EXTS R11, #1
MOV [R12], R13
Data_Polling:
EXTS R11, #1
MOV R7, [R12]
MOV R6, R7
XOR R7, R13
JNB R7.7, Prog_OK
;R12 contains the segment offset address to be
;programmed
;R13 contains the data to be programmed
;use EXTended addressing for next MOV instruction
;command cycle 4: the EPC starts execution of
;Programming Command
;use EXTended addressing for next MOV instruction
;read Flash Status register (FSB) in R7
;save it in R6 register
;Check if FSB.7 = Data.7 (i.e. R7.7 = R13.7)
JNB R6.5, Data_Polling
EXTS R11, #1
MOV R7, [R12]
XOR R7, R13
JNB R7.7, Prog_OK
Prog_Error:
MOV R7, #0F0h
EXTS R11, #1
MOV [R12], R7
...
...
...
Prog_OK:
....
....
;Check if FSB.5 = 1 (Programming Error)
;Programming Error: verify is Flash programmed
;data is OK
;use EXTended addressing for next MOV instruction
;read Flash Status register (FSB) in R7
;Check if FSB.7 = Data.7
;Programming failed: Flash remains in Write
;Operation.
;To go back to normal Read operations, a Read/Reset
;command
;must be performed
;load register R7 with Read/Reset command
;use EXTended addressing for next MOV instruction
;address is don’t care for Read/Reset command
;here place specific Error handling code
;When programming operation finished succesfully,
;Flash is set back automatically to normal Read Mode
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