SPI08N50C3 View Datasheet(PDF) - Infineon Technologies
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| SPI08N50C3 Datasheet PDF : 0 Pages | |||
SPP08N50C3, SPI08N50C3
SPA08N50C3
13 Forward characteristics of body diode
IF = f (VSD)
parameter: Tj , tp = 10 µs
10 2 SPP08N50C3
A
14 Avalanche SOA
IAR = f (tAR)
par.: Tj ≤ 150 °C
8
A
10 1
6
5
T j(START)=25°C
4
10 0
10 -1
0
Tj = 25 °C typ
Tj = 150 °C typ
Tj = 25 °C (98%)
Tj = 150 °C (98%)
0.4 0.8 1.2 1.6 2 2.4 V 3
VSD
15 Avalanche energy
EAS = f (Tj)
par.: ID = 5.5 A, VDD = 50 V
260
mJ
3
Tj(START)=125°C
2
1
0
10
-3
10 -2
10 -1
10 0
10 1
10 2
µs 10 4
tAR
16 Drain-source breakdown voltage
V(BR)DSS = f (Tj)
SPP08N50C3
600
V
220
200
180
160
140
120
100
80
60
40
20
0
20 40 60 80 100 120 °C 160
Tj
570
560
550
540
530
520
510
500
490
480
470
460
450
-60 -20
20
60 100 °C
180
Tj
Rev. 2.91
Page 8
2009-11-27
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