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P-TO252-3-1(2003) View Datasheet(PDF) - Infineon Technologies

Part Name
Description
View to exact match
P-TO252-3-1
(Rev.:2003)
Infineon
Infineon Technologies Infineon
P-TO252-3-1 Datasheet PDF : 12 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
Final data
SPD07N60C3
SPU07N60C3
Maximum Ratings
Parameter
Drain Source voltage slope
VDS = 480 V, ID = 7.3 A, Tj = 125 °C
Thermal Characteristics
Parameter
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
SMD version, device on PCB:
@ min. footprint
@ 6 cm2 cooling area 2)
Soldering temperature,
1.6 mm (0.063 in.) from case for 10s 3)
Symbol
dv/dt
Value
50
Unit
V/ns
Symbol
RthJC
RthJA
RthJA
Tsold
Values
Unit
min. typ. max.
-
-
1.5 K/W
-
-
75
-
-
75
-
-
50
-
- 260 °C
Electrical Characteristics, at Tj=25°C unless otherwise specified
Parameter
Symbol Conditions
Values
Unit
min. typ. max.
Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA 600
-
Drain-Source avalanche
V(BR)DS VGS=0V, ID=7.3A
- 700
breakdown voltage
-V
-
Gate threshold voltage
VGS(th) ID=350µΑ, VGS=VDS 2.1
3
3.9
Zero gate voltage drain current IDSS
VDS=600V, VGS=0V,
µA
Tj=25°C,
-
0.5
1
Tj=150°C
-
- 100
Gate-source leakage current
I GSS
VGS=30V, VDS=0V
-
- 100 nA
Drain-source on-state resistance RDS(on) VGS=10V, ID=4.6A,
Tj=25°C
- 0.54 0.6
Tj=150°C
- 1.46 -
Gate input resistance
RG
f=1MHz, open Drain
-
0.8
-
Page 2
2003-09-16
 

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