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P-TO251-3-1-2003 View Datasheet(PDF) - Infineon Technologies

Part NameDescriptionManufacturer
P-TO251-3-1(2003) Cool MOS™ Power Transistor Infineon
Infineon Technologies Infineon
P-TO251-3-1 Datasheet PDF : 12 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
Final data
Cool MOS™ Power Transistor
Feature
New revolutionary high voltage technology
Worldwide best RDS(on) in TO-251 and TO-252
Ultra low gate charge
Periodic avalanche rated
Extreme dv/dt rated
High peak current capability
Improved transconductance
SPD07N60C3
SPU07N60C3
VDS @ Tjmax 650
V
RDS(on)
0.6
ID
7.3 A
P-TO251-3-1 P-TO252-3-1
Type
SPD07N60C3
SPU07N60C3
Package
P-TO252-3-1
P-TO251-3-1
Ordering Code
Q67040-S4423
-
Marking
07N60C3
07N60C3
Maximum Ratings
Parameter
Symbol
Continuous drain current
ID
TC = 25 °C
TC = 100 °C
Pulsed drain current, tp limited by Tjmax
ID puls
Avalanche energy, single pulse
EAS
ID = 5.5 A, VDD = 50 V
Avalanche energy, repetitive tAR limited by Tjmax1) EAR
ID = 7.3 A, VDD = 50 V
Avalanche current, repetitive tAR limited by Tjmax IAR
Reverse diode dv/dt
dv/dt
IS=7.3A, VDS=480V, Tj=125°C
Gate source voltage static
Gate source voltage AC (f >1Hz)
Power dissipation, TC = 25°C
Operating and storage temperature
VGS
VGS
Ptot
Tj , Tstg
Page 1
Value
Unit
A
7.3
4.6
21.9
230
mJ
0.5
7.3
A
6
V/ns
±20
V
±30
83
W
-55... +150
°C
2003-09-16
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