2N03L06 View Datasheet(PDF) - Infineon Technologies
Part Name
Description
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2N03L06 Datasheet PDF : 8 Pages
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Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - case
SMD version, device on PCB:
@ min. footprint
@ 6 cm2 cooling area 3)
SPI80N03S2L-06
SPP80N03S2L-06,SPB80N03S2L-06
Symbol
Values
Unit
min. typ. max.
RthJC
RthJA
- 0.68 1 K/W
-
-
62
-
-
40
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
Static Characteristics
Drain-source breakdown voltage
VGS=0V, ID=1mA
Gate threshold voltage, VGS = VDS
ID = 80 µA
Zero gate voltage drain current
VDS=30V, VGS=0V, Tj=25°C
VDS=30V, VGS=0V, Tj=125°C
Gate-source leakage current
VGS=20V, VDS=0V
Drain-source on-state resistance
VGS=4.5V, ID=80A
VGS=4.5V, ID=80A, SMD version
Drain-source on-state resistance4)
VGS=10V, ID=80A
VGS=10V, ID=80A, SMD version
V(BR)DSS 30
-
-V
VGS(th)
1.2 1.6
2
IDSS
IGSS
µA
- 0.01 1
-
10 100
-
1 100 nA
RDS(on)
-
mΩ
7
9.5
-
6.6 9.2
RDS(on)
-
5
6.2
-
4.6 5.9
1Current limited by bondwire ; with an RthJC = 1K/W the chip is able to carry ID= 120A at 25°C, for detailed
information see app.-note ANPS071E available at www.infineon.com/optimos
2Defined by design. Not subject to production test.
3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
4Diagrams are related to straight lead versions
Page 2
2003-05-09
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