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SMP100LC-140 View Datasheet(PDF) - STMicroelectronics

Part NameDescriptionManufacturer
SMP100LC-140 Trisil™ for telecom equipment protection ST-Microelectronics
STMicroelectronics ST-Microelectronics
SMP100LC-140 Datasheet PDF : 12 Pages
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SMP100LC
Characteristics
Table 3.
Symbol
Thermal Resistances
Parameter
Rth(j-a) Junction to ambient (with recommended footprint)
Rth(j-l) Junction to leads
Table 4.
Symbol
Electrical Characteristics (Tamb = 25° C)
Parameter
VRM Stand-off voltage
VBR Breakdown voltage
VBO Breakover voltage
IRM Leakage current
IPP Peak pulse current
IBO Breakover current
IH Holding current
VR Continuous reverse voltage
IR Leakage current at VR
C Capacitance
Value
100
20
Unit
° C/W
° C/W
Type
IRM @ VRM
max.
IR @ VR (1)
Dynamic Static
VBO (2) VBO @ IBO (3)
max.
max. max. max.
IH (4)
min.
C(5) C(6)
typ. typ.
µA V µA V
V
V mA mA pF pF
SMP100LC-8
SMP100LC-25
6
8
25
15
50 (typ.) NA 75
22
25
40
35
NA 65
SMP100LC-35
SMP100LC-65
SMP100LC-90
SMP100LC-120
SMP100LC-140
SMP100LC-160
32
35
55
55
NA 55
55
65
85
85
45 90
81
90
120 125
40 80
108
120 155 150
35 75
126
140 180 175
30 65
2
5
800 150
144
160 205 200
30 65
SMP100LC-200
SMP100LC-230
SMP100LC-270
SMP100LC-320
SMP100LC-360
SMP100LC-400
180
200 255 250
207
230 295 285
243
270 345 335
290
320 400 390
325
360 460 450
360
400 540 530
30 60
30 60
30 60
25 50
25 50
20 45
1. IR measured at VR guarantee VBR min VR
2. See Figure 15: Test circuit 1 for Dynamic IBO and VBO parameters
3. See Figure 16: Test circuit 2 for IBO and VBO parameters
4. See Figure 17: Test circuit 3 for dynamic IH parameter
5. VR = 50 V bias, VRMS =1 V, F = 1 MHz
6. VR = 2V bias, VRMS =1 V, F = 1 MHz
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