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SMP100-65 View Datasheet(PDF) - STMicroelectronics

Part NameDescriptionManufacturer
SMP100-65 COMMUNICATION EQUIPMENT PROTECTION: TRISIL™ ST-Microelectronics
STMicroelectronics ST-Microelectronics
SMP100-65 Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
SMP100-xxx
DYNAMIC PARAMETERS
Symbol
Test conditions (see note 5)
Type
SMP100-8
SMP100LC-35
SMP100-65
SMP100-120
Test conditions 1
SMP100-140
dV/dt = 100 V/µs, di/dt < 10 A/µs, IPP = 100 A
SMP100-200
VBO
Test conditions 2
SMP100-230
dV/dt = 1 kV/µs, di/dt < 10 A/µs, IPP = 10 A
SMP100-270
SMP100-140H225
SMP100-200H225
SMP100-230H225
SMP100-270H225
Note 5 : VBO parameters are given by a KeyTek ’System 2’ generator with PN246I module.
See test circuits 3 for VBO dynamic parameters.
Max.
25
55
95
200
220
285
320
370
220
285
320
370
Unit
V
TEST CIRCUIT 1 FOR IBO and VBO parameters:
Auto
Tra nsfor m er
220V/2A
tp = 20ms
R1
static
140
relay.
R2
240
Vout
K
IBO
measure
D.U.T
V BO
measure
Tran sfo rm er
220V/800V
5A
TEST PROCEDURE :
Pulse Test duration (tp = 20ms):
- For Bidirectional devices = Switch K is closed
- For Unidirectional devices = Switch K is open.
VOUT Selection
- Device with VBO < 200 Volt
- VOUT = 250 VRMS, R1 = 140 .
- Device with VBO 200 Volt
- VOUT = 480 VRMS, R2 = 240 .
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