K10N60 View Datasheet(PDF) - Infineon Technologies

Part Name

Description

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K10N60

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode

Infineon Technologies 

500ns

400ns

300ns

200ns

100ns

IF = 20A

IF = 5A

IF = 10A

0ns

100A/s 300A/s 500A/s 700A/s 900A/s

d i F / d t , DIODE CURRENT SLOPE

Figure 21. Typical reverse recovery time as

a function of diode current slope

(VR = 200V, Tj = 125C,

Dynamic test circuit in Figure E)

20A

16A

12A

8A

IF = 20A

IF = 10A

I = 5A

F

4A

0A

100A/s 300A/s 500A/s 700A/s 900A/s

d i F / d t , DIODE CURRENT SLOPE

Figure 23. Typical reverse recovery current

as a function of diode current slope

(VR = 200V, Tj = 125C,

Dynamic test circuit in Figure E)

SKP10N60A

SKW10N60A

1400nC

1200nC

1000nC

IF = 20A

800nC

600nC

400nC

IF = 10A

IF = 5A

200nC

0nC

100A/s 300A/s 500A/s 700A/s 900A/s

d i F / d t , DIODE CURRENT SLOPE

Figure 22. Typical reverse recovery charge

as a function of diode current slope

(VR = 200V, Tj = 125C,

Dynamic test circuit in Figure E)

1 0 0 0 A /s

8 0 0 A /s

6 0 0 A /s

4 0 0 A /s

2 0 0 A /s

0 A /s

100A/s 300A/s 500A/s 700A/s 900A/s

diF/dt, DIODE CURRENT SLOPE

Figure 24. Typical diode peak rate of fall of

reverse recovery current as a function of

diode current slope

(VR = 200V, Tj = 125C,

Dynamic test circuit in Figure E)

9

Rev. 2.4 12.06.2013

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