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K10N60 View Datasheet(PDF) - Infineon Technologies

Part NameDescriptionManufacturer
K10N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode Infineon
Infineon Technologies Infineon
K10N60 Datasheet PDF : 14 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
500ns
400ns
300ns
200ns
100ns
IF = 20A
IF = 5A
IF = 10A
0ns
100A/s 300A/s 500A/s 700A/s 900A/s
d i F / d t , DIODE CURRENT SLOPE
Figure 21. Typical reverse recovery time as
a function of diode current slope
(VR = 200V, Tj = 125C,
Dynamic test circuit in Figure E)
20A
16A
12A
8A
IF = 20A
IF = 10A
I = 5A
F
4A
0A
100A/s 300A/s 500A/s 700A/s 900A/s
d i F / d t , DIODE CURRENT SLOPE
Figure 23. Typical reverse recovery current
as a function of diode current slope
(VR = 200V, Tj = 125C,
Dynamic test circuit in Figure E)
SKP10N60A
SKW10N60A
1400nC
1200nC
1000nC
IF = 20A
800nC
600nC
400nC
IF = 10A
IF = 5A
200nC
0nC
100A/s 300A/s 500A/s 700A/s 900A/s
d i F / d t , DIODE CURRENT SLOPE
Figure 22. Typical reverse recovery charge
as a function of diode current slope
(VR = 200V, Tj = 125C,
Dynamic test circuit in Figure E)
1 0 0 0 A /s
8 0 0 A /s
6 0 0 A /s
4 0 0 A /s
2 0 0 A /s
0 A /s
100A/s 300A/s 500A/s 700A/s 900A/s
diF/dt, DIODE CURRENT SLOPE
Figure 24. Typical diode peak rate of fall of
reverse recovery current as a function of
diode current slope
(VR = 200V, Tj = 125C,
Dynamic test circuit in Figure E)
9
Rev. 2.4 12.06.2013
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