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K10N60 Просмотр технического описания (PDF) - Infineon Technologies

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K10N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode Infineon
Infineon Technologies Infineon
K10N60 Datasheet PDF : 14 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
SKP10N60A
SKW10N60A
25V
20V
1nF
C iss
15V
10V
5V
120V
480V
100pF
Coss
C rss
0V
0nC
25nC
50nC
75nC
QGE, GATE CHARGE
Figure 17. Typical gate charge
(IC = 10A)
10pF
0V
10V
20V
30V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 18. Typical capacitance as a
function of collector-emitter voltage
(VGE = 0V, f = 1MHz)
25s
200A
20s
15s
10s
5s
150A
100A
50A
0s
10V
11V
12V
13V
14V
15V
VGE, GATE-EMITTER VOLTAGE
Figure 19. Short circuit withstand time as a
function of gate-emitter voltage
(VCE = 600V, start at Tj = 25C)
0A
10V
12V
14V
16V
18V
20V
VGE, GATE-EMITTER VOLTAGE
Figure 20. Typical short circuit collector
current as a function of gate-emitter voltage
(VCE 600V, Tj = 150C)
8
Rev. 2.4 12.06.2013
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