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K10N60 View Datasheet(PDF) - Infineon Technologies

Part NameDescriptionManufacturer
K10N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode Infineon
Infineon Technologies Infineon
K10N60 Datasheet PDF : 14 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
SKP10N60A
SKW10N60A
50A
Ic
TC=80°c
40A
10A
30A
20A
10A TC=110°c
Ic
0A
10Hz 100Hz 1kHz 10kHz 100kHz
1A
0,1A
1V
tp = 5 s
1 5 s
5 0 s
2 0 0 s
1ms
DC
10V
100V
1000V
f, SWITCHING FREQUENCY
Figure 1. Collector current as a function of
switching frequency
(Tj 150C, D = 0.5, VCE = 400V,
VGE = 0/+15V, RG = 25)
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 2. Safe operating area
(D = 0, TC = 25C, Tj 150C)
120W
100W
80W
60W
40W
20W
0W
25°C 50°C 75°C 100°C 125°C
TC, CASE TEMPERATURE
Figure 3. Power dissipation as a function
of case temperature
(Tj 150C)
25A
20A
15A
10A
5A
0A
25°C 50°C 75°C 100°C 125°C
TC, CASE TEMPERATURE
Figure 4. Collector current as a function of
case temperature
(VGE 15V, Tj 150C)
4
Rev. 2.4 12.06.2013
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