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K10N60 Просмотр технического описания (PDF) - Infineon Technologies

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K10N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode Infineon
Infineon Technologies Infineon
K10N60 Datasheet PDF : 14 Pages
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SKP10N60A
SKW10N60A
Switching Characteristic, Inductive Load, at Tj=25 C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during tb
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
trr
tS
tF
Qrr
Irrm
dirr/dt
Tj=25C,
VCC=400V,IC=10A,
VGE=0/15V,
RG=25,
L1)=180nH,
C1)=55pF
Energy losses include
“tail” and diode
reverse recovery.
Tj=25C,
VR=200V, IF=10A,
diF/dt=200A/s
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
Value
typ.
Unit
max.
28
12
178
24
0.15
0.17
0.320
34 ns
15
214
29
0.173 mJ
0.221
0.394
220
- ns
20
-
200
-
310
- nC
4.5
-A
180
- A/s
Switching Characteristic, Inductive Load, at Tj=150 C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during tb
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
trr
tS
tF
Qrr
Irrm
dirr/dt
Tj=150C
VCC=400V,IC=10A,
VGE=0/15V,
RG=25
L1)=180nH,
C1)=55pF
Energy losses include
“tail” and diode
reverse recovery.
Tj=150C
VR=200V, IF=10A,
diF/dt=200A/s
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
Value
typ.
Unit
max.
28
12
198
26
0.260
0.280
0.540
34 ns
15
238
32
0.299 mJ
0.364
0.663
350
- ns
36
-
314
-
690
- nC
6.3
-A
200
- A/s
1) Leakage inductance L a nd Stray capacity C due to dynamic test circuit in Figure E.
3
Rev. 2.4 12.06.2013
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