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K10N60 Просмотр технического описания (PDF) - Infineon Technologies

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K10N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode Infineon
Infineon Technologies Infineon
K10N60 Datasheet PDF : 14 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
SKP10N60A
SKW10N60A
Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Diode thermal resistance,
junction – case
Thermal resistance,
junction – ambient
Symbol Conditions
RthJC
RthJCD
RthJA
PG-TO-220-3-1
PG-TO-247-3-21
Max. Value
Unit
1.35
K/W
2.4
62
40
Electrical Characteristic, at Tj = 25 C, unless otherwise specified
Parameter
Symbol
Conditions
Static Characteristic
Collector-emitter breakdown voltage V( B R ) C E S VG E = 0 V , I C = 5 0 0 A
Collector-emitter saturation voltage VC E ( s a t ) VG E = 1 5 V , I C = 1 0 A
Tj=25C
Diode forward voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
VF
VGE(th)
ICES
Tj=150C
VGE=0V, IF=10A
Tj=25C
Tj=150C
IC=300A,VCE=VGE
VCE=600V,VGE=0V
Tj=25C
Gate-emitter leakage current
Transconductance
Dynamic Characteristic
IGES
gfs
Tj=150C
VCE=0V,VGE=20V
VCE=20V, IC=10A
Input capacitance
Output capacitance
Reverse transfer capacitance
Ciss
Coss
Crss
VCE=25V,
VGE=0V,
f=1MHz
Gate charge
QGate
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current2)
LE
IC(SC)
VCC=480V, IC=10A
VGE=15V
PG-TO-220-3-1
PG-TO-247-3-21
VGE=15V,tSC10s
VCC 600V,
Tj 150C
min.
600
1.7
-
1.2
-
3
-
-
-
-
-
-
-
-
-
-
-
Value
Typ.
-
2
2.3
1.4
1.25
4
-
-
-
6.7
550
62
42
52
7
13
100
Unit
max.
-V
2.4
2.8
1.8
1.65
5
A
40
1500
100 nA
-S
660 pF
75
51
68 nC
- nH
-
-A
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
2
Rev. 2.4 12.06.2013
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