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K10N60 Просмотр технического описания (PDF) - Infineon Technologies

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K10N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode Infineon
Infineon Technologies Infineon
K10N60 Datasheet PDF : 14 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
20A
15A
150°C
10A
100°C
5A
25°C
-55°C
0A
0.0V
0.5V
1.0V
1.5V
2.0V
VF, FORWARD VOLTAGE
Figure 25. Typical diode forward current as
a function of forward voltage
SKP10N60A
SKW10N60A
2.0V
I F = 20A
1.5V
I F = 10A
1.0V
-40°C 0°C 40°C 80°C 120°C
Tj, JUNCTION TEMPERATURE
Figure 26. Typical diode forward voltage as
a function of junction temperature
D=0.5
100K/W
0.2
0.1
0.05
10-1K/W 0.02
0.01
R,(K/W)
0.759
0.481
0.609
0.551
R1
, (s)
5.53*10-2
4.28*10-3
4.83*10-4
5.77*10-5
R2
single pulse
C1=1/R1 C2=2/R2
10-2K/W
1µs 10µs 100µs 1ms 10ms 100ms 1s
tp, PULSE WIDTH
Figure 27. Diode transient thermal
impedance as a function of pulse width
(D = tp / T)
10
Rev. 2.4 12.06.2013
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