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K10N60(2008) View Datasheet(PDF) - Infineon Technologies

Part Name
Description
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K10N60 Datasheet PDF : 0 Pages
500ns
400ns
300ns
200ns
100ns
IF = 20A
IF = 5A
IF = 10A
0ns
100A/µs 300A/µs 500A/µs 700A/µs 900A/µs
d i F / d t , DIODE CURRENT SLOPE
Figure 21. Typical reverse recovery time as
a function of diode current slope
(VR = 200V, Tj = 125°C,
Dynamic test circuit in Figure E)
20A
16A
12A
IF = 20A
IF = 10A
IF = 5A
8A
4A
0A
100A/µs 300A/µs 500A/µs 700A /µs 900A /µs
d i F / d t , DIODE CURRENT SLOPE
Figure 23. Typical reverse recovery current
as a function of diode current slope
(VR = 200V, Tj = 125°C,
Dynamic test circuit in Figure E)
SKP10N60A
SKW10N60A
1400nC
1200nC
1000nC
IF = 20A
800nC
600nC
400nC
IF = 10A
IF = 5A
200nC
0nC
100A /µs 300A/µs 500A /µs 700A /µs 900A/µs
d i F / d t , DIODE CURRENT SLOPE
Figure 22. Typical reverse recovery charge
as a function of diode current slope
(VR = 200V, Tj = 125°C,
Dynamic test circuit in Figure E)
1000A /µs
800A /µs
600A /µs
400A /µs
200A /µs
0A /µs
100A /µs 300A /µs 500A /µs 700A /µs 900A /µs
diF/dt, DIODE CURRENT SLOPE
Figure 24. Typical diode peak rate of fall of
reverse recovery current as a function of
diode current slope
(VR = 200V, Tj = 125°C,
Dynamic test circuit in Figure E)
9
Rev. 2.3 Sep 08
 

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