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K10N60-2008 Просмотр технического описания (PDF) - Infineon Technologies

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K10N60(2008) Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode Infineon
Infineon Technologies Infineon
K10N60 Datasheet PDF : 14 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
SKP10N60A
SKW10N60A
1,6m J
1,4m J
*) Eon and Ets include losses
due to diode recovery.
1,2m J
E ts*
1,0m J
0,8m J
0,6m J
0,4m J
E on*
E off
0,2m J
0,0m J
0A
5A
10A 15A 20A 25A
IC, COLLECTOR CURRENT
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, Tj = 150°C, VCE = 400V,
VGE = 0/+15V, RG = 2 5 ,
Dynamic test circuit in Figure E)
1,0m J
*) Eon and Ets include losses
due to diode recovery.
0,8m J
E ts*
0,6m J
0,4m J
E off
E on*
0,2m J
0
20
40
60
80
RG, GATE RESISTOR
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, Tj = 150°C, VCE = 400V,
VGE = 0/+15V, IC = 10A,
Dynamic test circuit in Figure E)
0,8mJ
*) Eon and Ets include losses
due to diode recovery.
0,6mJ
0,4mJ
Ets*
0,2mJ
Eoff
Eon*
0,0mJ
0°C
50°C
100°C
150°C
Tj, JUNCTION TEMPERATURE
Figure 15. Typical switching energy losses
as a function of junction temperature
(inductive load, VCE = 400V, VGE = 0/+15V,
IC = 10A, RG = 2 5 ,
Dynamic test circuit in Figure E)
100K/W
D=0.5
0.2
1 0 -1K /W
0.1
0.05
0.02
10-2K/W 0.01
R,(K/W)
0.4287
0.4830
0.4383
τ, (s)
0.0358
4.3*10-3
3.46*10-4
R1
R2
C1=τ1/R1 C2=τ2/R2
single pulse
1 0 -3K /W
1µs 10µs 100µs 1ms 10ms 100ms 1s
tp, PULSE WIDTH
Figure 16. IGBT transient thermal
impedance as a function of pulse width
(D = tp / T)
7
Rev. 2.3 Sep 08
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