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IRFP150PBF-2008 View Datasheet(PDF) - Vishay Semiconductors

Part NameDescriptionManufacturer
IRFP150PBF(2008) Power MOSFET Vishay
Vishay Semiconductors Vishay
IRFP150PBF Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
IRFP150, SiHFP150
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
RthJA
RthCS
Maximum Junction-to-Case (Drain)
RthJC
TYP.
-
0.24
-
MAX.
40
-
0.65
UNIT
°C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
ΔVDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = 250 µA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 µA
VGS = ± 20 V
VDS = 100 V, VGS = 0 V
VDS = 80 V, VGS = 0 V, TJ = 150 °C
VGS = 10 V
ID = 25 Ab
VDS = 25 V, ID = 25 Ab
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
VGS = 10 V
ID = 41 A, VDS = 80 V,
see fig. 6 and 13b
VDD = 50 V, ID = 41 A,
RG = 6.2 Ω, RD = 1.2 Ω, see fig. 10b
Internal Drain Inductance
LD
Internal Source Inductance
LS
Drain-Source Body Diode Characteristics
Between lead,
6 mm (0.25") from
package and center of
die contact
D
G
S
MIN.
100
-
2.0
-
-
-
-
13
-
-
-
-
-
-
-
-
-
-
-
-
TYP. MAX. UNIT
-
-
V
0.14
-
V/°C
-
4.0
V
-
± 100 nA
-
25
µA
-
250
-
0.055 Ω
-
-
S
2800
-
1100
-
pF
280
-
-
140
-
29
nC
-
68
16
-
120
-
ns
60
-
81
-
5.0
-
nH
13
-
Continuous Source-Drain Diode Current
Pulsed Diode Forward Currenta
IS
MOSFET symbol
showing the
integral reverse
ISM
p - n junction diode
D
G
S
-
-
41
A
-
-
160
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
VSD
TJ = 25 °C, IS = 41 A, VGS = 0 Vb
-
-
2.5
V
trr
-
220
330
ns
TJ = 25 °C, IF = 41 A, dI/dt = 100 A/µsb
Qrr
-
1.9
2.9
µC
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 µs; duty cycle 2 %.
www.vishay.com
2
Document Number: 91203
S-81369-Rev. A, 07-Jul-08
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