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IRFP21N60L View Datasheet(PDF) - Vishay Semiconductors

Part NameDescriptionManufacturer
IRFP21N60L Power MOSFET Vishay
Vishay Semiconductors Vishay
IRFP21N60L Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
IRFP21N60L, SiHFP21N60L
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1000
100
10
TOP
BOTTOM
VGS
15V
12V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
1
0.1
0.01
0.001
0.1
5.5V
20µs PULSE WIDTH
Tj = 25°C
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics
1000
100
TJ = 150°C
10
1
TJ = 25°C
0.1
VDS = 50V
20µs PULSE WIDTH
0.01
4
6
8
10
12
14
16
VGS, Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
100
VGS
TOP
15V
12V
10V
8.0V
10
7.0V
6.5V
6.0V
BOTTOM 5.5V
1
5.5V
0.1
0.01
0.1
20µs PULSE WIDTH
Tj = 150°C
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics
3.0
ID = 21A
2.5 VGS = 10V
2.0
1.5
1.0
0.5
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91206
S-81273-Rev. B, 16-Jun-08
www.vishay.com
3
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