SI2302ADS-T1-GE3 View Datasheet(PDF) - Vishay Semiconductors
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Si2302ADS
Vishay Siliconix
SPECIFICATIONS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-Resistancea
Forward Transconductancea
Diode Forward Voltage
Dynamic
V(BR)DSS
VGS(th)
VGS = 0 V, ID = 10 µA
VDS = VGS, ID = 50 µA
20
V
0.65
0.95
1.2
IGSS
VDS = 0 V, VGS = ± 8 V
± 100
nA
IDSS
VDS = 20 V, VGS = 0 V
VDS = 20 V, VGS = 0 V, TJ = 55 °C
0.1
µA
2.0
ID(on)
RDS(on)
VDS ≥ 5 V, VGS = 4.5 V
VDS ≥ 5 V, VGS = 2.5 V
VGS = 4.5 V, ID = 3.6 A
VGS = 2.5 V, ID = 3.1 A
6
A
4
0.045 0.060b
Ω
0.070 0.115
gfs
VDS = 5 V, ID = 3.6 A
8
S
VSD
IS = 0.94 A, VGS = 0 V
0.76
1.2
V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Qgs
Qgd
Ciss
Coss
Crss
VDS = 10 V, VGS = 4.5 V, ID = 3.6 A
VDS = 10 V, VGS = 0 V, f = 1 MHz
4.0
10
0.65
nC
1.5
300
120
pF
80
Gate Resistance
Switching
Rg
f = 1 MHz
0.5
1
2
Ω
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
td(on)
tr
td(off)
tf
VDD = 10 V, RL = 2.8 Ω
ID ≅ 3.6 A, VGEN = 4.5 V, Rg = 6 Ω
7
15
55
80
ns
16
60
10
25
Notes:
a. Pulse test; PW ≤ 300 µs, duty cycle ≤ 2 %.
b. Effective for production 10/04.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
Document Number: 71831
2
S11-2000-Rev. J, 10-Oct-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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