G02N60(2006) View Datasheet(PDF) - Infineon Technologies
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Description
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G02N60 Datasheet PDF : 11 Pages
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SGB02N60
*) Eon and Ets include losses
due to diode recovery.
0.2mJ
Ets*
0.2mJ
*) Eon and Ets include losses
due to diode recovery.
0.1mJ
Eon*
Eoff
0.0mJ
0A
1A
2A
3A
4A
5A
IC, COLLECTOR CURRENT
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, Tj = 150°C, VCE = 400V,
VGE = 0/+15V, RG = 1 1 8 Ω,
Dynamic test circuit in Figure E)
0.1mJ
E ts *
Eon*
Eoff
0.0mJ
0Ω
100Ω
200Ω
300Ω
400Ω
RG, GATE RESISTOR
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, Tj = 150°C, VCE = 400V,
VGE = 0/+15V, IC = 2A,
Dynamic test circuit in Figure E)
0.2mJ
*) Eon and Ets include losses
due to diode recovery.
Ets*
0.1mJ
Eon*
E off
0.0mJ
0°C
50°C
100°C
150°C
Tj, JUNCTION TEMPERATURE
Figure 15. Typical switching energy losses
as a function of junction temperature
(inductive load, VCE = 400V, VGE = 0/+15V,
IC = 2A, RG = 1 1 8Ω,
Dynamic test circuit in Figure E)
D=0.5
100K/W 0.2
0.1
0.05
0.02
10-1K/W
0.01
R,(K/W)
1.026
1.3
1.69
0.183
R1
τ, (s)
0.035
3.62*10-3
4.02*10-4
4.21*10-5
R2
10-2K/W
single pulse
C1=τ1/R1 C2=τ2/R2
1µs 10µs 100µs 1ms 10ms 100ms 1s
tp, PULSE WIDTH
Figure 16. IGBT transient thermal
impedance as a function of pulse width
(D = tp / T)
7
Rev. 2.3 Nov 06
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