WMF128K8 View Datasheet(PDF) - Microsemi Corporation
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WMF128K8 Datasheet PDF : 14 Pages
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WMF128K8-XXX5
ABSOLUTE MAXIMUM RATINGS (1)
Parameter
Unit
Operating Temperature
-55 to +125
°C
Supply Voltage (VCC)
Signal Voltage Range (any pin except A9) (2)
-2.0 to +7.0
V
-2.0 to +7.0
V
Storage Temperature Range
-65 to +150
°C
Lead Temperature (soldering, 10 seconds)
+300
°C
Data Retention Mil Temp
10
years
Endurance (write/erase cycles) (Mil Temp)
10,000 min
cycles
A9 Voltage for sector protect (VID) (3)
-2.0 to +14.0
V
NOTES:
1. Stresses above the absolute maximum rating may cause permanent damage to the device.
Extended operation at the maximum levels may degrade performance and affect reliability.
2. Minimum DC voltage on input or I/O pins is -0.5V. During voltage transitions, inputs may
overshoot VSS to -2.0 V for periods of up to 20ns. Maximum DC voltage on output and I/O pins
is VCC + 0.5V. During voltage transitions, outputs may overshoot to Vcc + 2.0 V for periods of up
to 20ns.
3. Minimum DC input voltage on A9 pin is -0.5V. During voltage transitions, A9 may overshoot
Vss to -2V for periods of up to 20ns. Maximum DC input voltage on A9 is +13.5V which may
overshoot to 14.0 V for periods up to 20ns.
RECOMMENDED OPERATING CONDITIONS
Parameter
Supply Voltage
Input High Voltage
Input Low Voltage
Operating Temp. (Mil.)
Operating Temp. (Ind.)
A9 Voltage for Sector Protect
Symbol
VCC
VIH
VIL
TA
TA
VID
Min
Max
Unit
4.5
5.5
V
2.0 VCC + 0.5
V
-0.5
+0.8
V
-55
+125
°C
-40
+85
°C
11.5
12.5
V
CAPACITANCE
TA = +25°C
Parameter
Symbol
Conditions
Max Unit
Address Input capacitance
CAD VI/O = 0 V, f = 1.0 MHz 15 pF
Output Enable capacitance
Write Enable capacitance
Chip Select capacitance
COE VIN = 0 V, f = 1.0 MHz 15 pF
CWE VIN = 0 V, f = 1.0 MHz 15 pF
CCS VIN = 0 V, f = 1.0 MHz 15 pF
Data I/O capacitance
CI/O VI/O = 0 V, f = 1.0 MHz 15 pF
This parameter is guaranteed by design but not tested.
DC CHARACTERISTICS — CMOS COMPATIBLE
VCC = 5.0V, VSS = 0V, -55°C ≤ TA ≤ +125°C
Parameter
Symbol Conditions
Min
Max
Unit
Input Leakage Current
ILI
VCC = 5.5, VIN = GND to VCC
10
μA
Output Leakage Current
ILO
VCC = 5.5, VIN = GND to VCC
10
μA
VCC Active Current for Read (1)
ICC1
CS# = VIL, OE# = VIH
35
mA
VCC Active Current for Program or Erase (2)
ICC2
CS# = VIL, OE# = VIH
50
mA
VCC Standby Current
ICC3
VCC = 5.5, CS# = VIH, f = 5MHz
1.6
mA
Output Low Voltage
VOL
IOL = 8.0 mA, VCC = 4.5
0.45
V
Output High Voltage
VOH1
IOH = -2.5 mA, VCC = 4.5
0.85 x VCC
V
Output High Voltage
VOH2
IOH = -100 μA, VCC = 4.5
VCC - 0.4
V
Low VCC Lock-Out Voltage
VLKO
3.2
V
NOTES:
1. The ICC current listed includes both the DC operating current and the frequency dependent component (at 5 MHz).
The frequency component typically is less than 2 mA/MHz, with OE# at VIH.
2. ICC active while Embedded Algorithm (program or erase) is in progress.
3. DC test conditions: VIL = 0.3V, VIH = VCC - 0.3V
AC TEST CIRCUIT
I OL
Current Source
D.U.T.
Ceff = 50 pf
I OH
Current Source
VZ 1.5V
(Bipolar Supply)
AC TEST CONDITIONS
Parameter
Typ
Unit
Input Pulse Levels
VIL = 0, VIH = 3.0
V
Input Rise and Fall
5
ns
Input and Output Reference Level
1.5
V
Output Timing Reference Level
1.5
V
NOTES:
VZ is programmable from -2V to +7V.
IOL & IOH programmable from 0 to 16mA.
Tester Impedance Z0 = 75 Ω.
VZ is typically the midpoint of VOH and VOL.
IOL & IOH are adjusted to simulate a typical resistive load circuit.
ATE tester includes jig capacitance.
Microsemi Corporation reserves the right to change products or specifications without notice.
June 2011 © 2011 Microsemi Corporation. All rights reserved.
2
Rev. 6
Microsemi Corporation • (602) 437-1520 • www.whiteedc.com
www.microsemi.com
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