FQA11N90_F109 View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
View to exact match
FQA11N90_F109 Datasheet PDF : 8 Pages
| |||
Typical Characteristics
VGS
Top : 15.0 V
10.0 V
8.0 V
101
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
100
10-1
10-1
※ Notes :
1. 250μ s Pulse Test
2. TC = 25℃
100
101
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
2.0
1.6
VGS = 10V
VGS = 20V
1.2
0.8
※ Note : TJ = 25℃
0.4
0
8
16
24
32
40
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
5000
4500
4000
3500
3000
2500
2000
1500
1000
500
0
10-1
Ciss
Coss
Crss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
100
101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
101
100
10-1
2
150oC
25oC
-55oC
※ Notes :
1. VDS = 50V
2. 250μ s Pulse Test
4
6
8
10
VGS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
101
100
10-1
0.2
150℃
25℃
※ Notes :
1. VGS = 0V
2. 250μ s Pulse Test
0.4
0.6
0.8
1.0
1.2
VSD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current and
Temperature
12
10
VDS = 180V
VDS = 450V
8
VDS = 720V
6
4
2
※ Note : ID = 11.4 A
0
0
10
20
30
40
50
60
70
80
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
©2006 Fairchild Semiconductor Corporation
3
FQA11N90_F109 Rev. C1
www.fairchildsemi.com
|
|
Share Link: 