FQA11N90_F109 View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
View to exact match
FQA11N90_F109 Datasheet PDF : 8 Pages
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Package Marking and Ordering Information
Device Marking
FQA11N90
Device
FQA11N90_F109
Package
TO-3PN
Reel Size
Tube
Tape Width
N/A
Quantity
30 units
Electrical Characteristics TC = 25°C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min
Off Characteristics
BVDSS Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 μA
900
ΔBVDSS Breakdown Voltage Temperature
/ ΔTJ Coefficient
ID = 250 μA, Referenced to 25°C
--
IDSS
Zero Gate Voltage Drain Current
VDS = 900 V, VGS = 0 V
VDS = 720 V, TC = 125°C
--
--
IGSSF
Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V
--
IGSSR
Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V
--
On Characteristics
VGS(th) Gate Threshold Voltage
VDS = VGS, ID = 250 μA
3.0
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 5.7 A
--
gFS
Forward Transconductance
VDS = 50 V, ID = 5.7 A
--
Dynamic Characteristics
Ciss
Input Capacitance
VDS = 25 V, VGS = 0 V,
--
Coss
Output Capacitance
f = 1.0 MHz
--
Crss
Reverse Transfer Capacitance
--
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 450 V, ID = 11.4 A,
RG = 25 Ω
VDS = 720 V, ID = 11.4 A,
VGS = 10 V
--
--
--
(note 4)
--
--
--
(note 4)
--
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
VSD
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 11.4 A
--
trr
Reverse Recovery Time
VGS = 0 V, IS = 11.4 A,
--
Qrr
Reverse Recovery Charge
dIF / dt = 100 A/μs
--
Notes :
1. Repetitive Rating : Pulse width limited by maximum junction temperature.
2. L = 15 mH, IAS = 11.4 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C.
3. ISD ≤ 11.4 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature.
Typ
--
1.0
--
--
--
--
--
0.75
12
2700
260
30
65
135
165
90
72
16
35
--
--
--
850
11.2
Max
--
--
10
100
100
-100
5.0
0.96
--
3500
340
40
140
280
340
190
94
--
--
11.4
45.6
1.4
--
--
Unit
V
V/°C
μA
μA
nA
nA
V
Ω
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
A
A
V
ns
μC
©2006 Fairchild Semiconductor Corporation
2
FQA11N90_F109 Rev. C1
www.fairchildsemi.com
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