FQA11N90_F109 View Datasheet(PDF) - Fairchild Semiconductor
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Description
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FQA11N90_F109 Datasheet PDF : 8 Pages
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FQA11N90_F109
N-Channel QFET® MOSFET
900 V, 11.4 A, 960 mΩ
Features
• 11.4 A, 900 V, RDS(on) = 960 mΩ (Max.) @ VGS = 10 V,
ID = 5.7 A
• Low Gate Charge (Typ. 72 nC)
• Low Crss (Typ. 30 pF)
• 100% Avalanche Tested
• RoHS compliant
November 2013
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance and
high avalanche energy strength. These devices are suitable
for switched mode power supplies, active power factor
correction (PFC), and electronic lamp ballasts.
D
G
G
D
S
TO-3PN
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain to Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max
Thermal Resistance, Junction to Ambient, Max
S
FQA11N90_F109
900
11.4
7.2
45.6
± 30
1000
11.4
30
4.0
300
2.38
-55 to +150
300
FQA11N90_F109
0.42
40
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
oC/W
oC/W
©2006 Fairchild Semiconductor Corporation
1
FQA11N90_F109 Rev. C1
www.fairchildsemi.com
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