D06S60 View Datasheet(PDF) - Infineon Technologies

Part Name

Description

View to exact match

D06S60

thinQ!™ SiC Schottky Diode

Infineon Technologies 

Thermal Characteristics

Parameter

Characteristics

Thermal resistance, junction - case

Thermal resistance, junction - ambient, leaded

SDP06S60

SDT06S60

Symbol

Values

Unit

min. typ. max.

RthJC

RthJA

-

-

2.6 K/W

-

-

62

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter

Symbol

Values

Unit

min. typ. max.

Static Characteristics

Diode forward voltage

IF=6A, Tj=25°C

IF=6A, Tj=150°C

VF

V

-

1.5 1.7

-

1.7 2.1

Reverse current

VR=600V, Tj=25°C

VR=600V, Tj=150°C

IR

µA

-

20 200

-

50 1000

1CCM, VIN= 85VAC, Tj = 150°C, TC =100°C, η = 93%, ∆ IIN = 30%

2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical without blown air.

Rev. 2.4

Page 2

2008-06-02

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