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D04S60 View Datasheet(PDF) - Infineon Technologies

Part Name
Description
View to exact match
D04S60
Infineon
Infineon Technologies Infineon
D04S60 Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
Silicon Carbide Schottky Diode
Worlds first 600V Schottky diode
Revolutionary semiconductor
material - Silicon Carbide
Switching behavior benchmark
No reverse recovery
No temperature influence on
the switching behavior
Ideal diode for Power Factor
Correction up to 800W 1)
No forward recovery
PG-TO220-2-2.
SDP04S60, SDD04S60
SDT04S60
thinQ!¥ SiC Schottky Diode
Product Summary
VRRM
600 V
Qc
13 nC
IF
4A
P-TO252
P-TO220
Type
SDP04S60
SDD04S60
SDT04S60
Package
P-TO220-3
P-TO252-3
PG-TO220-2-2.
Ordering Code
Q67040-S4369
Q67040-S4368
Q67040-S4445
Marking
D04S60
D04S60
D04S60
Pin 1
n.c.
n.c.
C
Pin 2
C
A
A
Pin 3
A
C
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous forward current, TC=100°C
RMS forward current, f=50Hz
IF
IFRMS
Surge non repetitive forward current, sine halfwave IFSM
TC=25°C, tp=10ms
Repetitive peak forward current
IFRM
Tj=150°C, TC=100°C, D=0.1
Non repetitive peak forward current
IFMAX
tp=10µs, TC=25°C
i 2t value, TC=25°C, tp=10ms
Repetitive peak reverse voltage
³i2dt
VRRM
Surge peak reverse voltage
Power dissipation, TC=25°C
VRSM
Ptot
Operating and storage temperature
Tj , Tstg
Value
4
5.6
12.5
18
40
0.78
600
600
36.5
-55... +175
Unit
A
A²s
V
W
°C
Rev. 2.5
Page 1
2008-06-02
 

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