SD1006 View Datasheet(PDF) - Advanced Semiconductor
Part Name
Description
View to exact match
SD1006 Datasheet PDF : 1 Pages
| |||
SD1006
NPN SILICON HIGH FREQUENCY TRANSISTOR
DESCRIPTION:
The ASI SD1006 is a High Frequency
Transistor for General Purpose
Amplifier Applications.
MAXIMUM RATINGS
IC
400 mA
VCEO
30 V
VCBO
50 V
PDISS
3.5 W @ TC = 25 °C
TJ
-65 °C to +200 °C
TSTG
-65 °C to +200 °C
θJC
50 °C/W
PACKAGE STYLE TO-39
1 = EMITTER 2 = BASE
3 = COLLECTOR
NONE
CHARACTERISTICS TC = 25 °C
SYMBOL
TEST CONDITIONS
BVCEO
IC = 5.0 mA
BVCBO
IC = 100 µA
BVEBO
IE = 100 µA
ICEO
VCE = 28 V
hFE
VCE = 15 V IC = 50 mA
ft
VCE = 15 V IC = 50 mA
Cob
VCB = 30 V
f = 100 KHz
Cib
VEB = 0.5 V
f = 100 KHz
NFNB
VCE = 10 V IC = 10 mA
f = 2000 MHz
NFBB
VCE = 15 V IC = 50 mA
f = 216 MHz
GVE
VCE = 15 V IC = 50 mA
f = 216 MHz
XMOD
VCE = 15 V
IC = 50 mA Pout = +45 dbmV
2NDO
VCE = 15 V
IC = 50 mA Pout = +45 dbmV
MINIMUM
30
50
5.0
30
1500
TYPICAL MAXIMUM
100
300
1800
2.5
3.5
8.0
10
2.7
7.0
8.0
7.2
6.8
-60
-57
-60
-50
UNITS
V
V
V
µA
---
MHz
pF
pF
dB
dB
dB
dB
dB
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
|
|
Share Link: 