datasheetbank_Logo
Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site

S-1000C45-N4T1G View Datasheet(PDF) - Seiko Instruments Inc

Part Name
Description
View to exact match
S-1000C45-N4T1G
SII
Seiko Instruments Inc SII
S-1000C45-N4T1G Datasheet PDF : 38 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
Rev.2.3_00
ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-1000 Series
„ Electrical Characteristics
1. Nch open-drain output products
Table 9
(Ta = 25 °C unless otherwise specified)
Measure-
Item
Symbol
Condition
Min. Typ. Max. Unit ment
circuit
Detection voltage*1
Hysteresis width
VDET
VHYS
VDET(S) VDET(S) VDET(S)
×0.99
×1.01
V
1
VDET
×0.03
VDET VDET
×0.05 ×0.07
V
1
Current consumption
Operating voltage
Output current
Leakage current
Response time
ISS
VDD = −VDET(S) + 1.5 V S-1000N15 to 39
VDD = 5.5 V
S-1000N40 to 46
350 900 nA
2
350 900 nA
2
VDD
0.95
5.5 V
1
Output transistor,
IOUT
Nch, VDS = 0.5 V, VDD = 1.2 V
1.36 2.55
mA
3
ILEAK
Output transistor,
Nch, VDS = 5.5 V, VDD = 5.5 V
100 nA
3
tPLH
60 µs
1
Detection voltage
∆−VDET
temperature coefficient*2 Ta•−VDET
Ta = −40 to +85 °C
ppm /
±100 ±350 °C
1
*1. VDET: Actual detection voltage value, VDET(S): Specified detection voltage value (The center value of the detection voltage
range in Table 1.)
*2. The temperature change ratio in the detection voltage [mV / °C] is calculated by using the following equation.
[ ] [ ] [ ] ∆ − VDET
Ta
mV / °C *1 = ( ) VDET(S) Typ.
V *2 × ∆ − VDET
Ta VDET
ppm / °C *3 ÷ 1000
*1. Temperature change ratio of the detection voltage
*2. Specified detection voltage
*3. Detection voltage temperature coefficient
Seiko Instruments Inc.
9
 

Share Link: 

datasheetbank.com [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]