RN49A5 View Datasheet(PDF) - Toshiba
Part Name
Description
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RN49A5 Datasheet PDF : 6 Pages
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RN49A5
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process)
RN49A5
Switching, Inverter Circuit, Interface Circuit
and Driver Circuit Applications
• Two devices are incorporated into an Ultra-Super-Mini (6-pin) package
• Incorporating a bias resistor into a transistor reduces the parts count.
Reducing the parts count enables the manufacture of ever more compact
equipment and lowers assembly cost.
• Diverse resistance values are available suited to a range of different
circuit designs.
Equivalent Circuit and Bias Resister Values
Unit: mm
Q1
R1 : 10 kΩ, R2 : 10 kΩ
Q2
R1: 2.2 kΩ, R2: 10 kΩ
Q1 : RN1107F Equivalent
Q2 : RN2327A Equivalent
Q1 Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
VCBO
VCEO
VEBO
IC
Q2 Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
VCBO
VCEO
VEBO
IC
Rating
50
50
6
100
Rating
−15
−12
−6
−500
JEDEC
―
JEITA
―
TOSHIBA
2-2J1A
Weight: 6.8mg(typ.)
Unit
V
V
V
mA
Unit
V
V
V
mA
1
2004-05-20
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