datasheetbank_Logo
Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site

RN4909 View Datasheet(PDF) - Toshiba

Part Name
Description
View to exact match
RN4909 Datasheet PDF : 5 Pages
1 2 3 4 5
RN4909
TOSHIBA Transistor
Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
RN4909
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Unit: mm
l Includeing two devices in US6 (ultra super mini type with 6 leads)
l With built-in bias resistors
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
Equivalent Circuit and Bias Resister Values
R1: 47k
R2: 22k
(Q1, Q2 Common)
Q1 Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
VCBO
VCEO
VEBO
IC
Q2 Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
VCBO
VCEO
VEBO
IC
Rating
50
50
15
100
Rating
50
50
15
100
Unit
JEDEC
V
EIAJ
TOSHIBA
V
Weight: 6.8mg
V
mA
2-2J1A
Unit
V
V
V
mA
1
2001-06-07
 

Share Link: 

datasheetbank.com [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]