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RN4904FE データシートの表示(PDF) - Toshiba

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RN4904FE TOSHIBA Transistor Silicon PNP NPN Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) Toshiba
Toshiba Toshiba
RN4904FE Datasheet PDF : 6 Pages
1 2 3 4 5 6
Electrical Characteristics (Ta = 25°C) (Q1)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Input voltage (ON)
Input voltage (OFF)
Transition frequency
Collector output capacitance
Symbol
Test Condition
ICBO
ICEO
IEBO
hFE
VCE (sat)
VI (ON)
VI (OFF)
fT
Cob
VCB = −50 V, IE = 0
VCE = −50 V, IB = 0
VEB = −10 V, IC = 0
VCE = −5 V, IC = −10 mA
IC = −5 mA, IB = −0.25 mA
VCE = −0.2 V, IC = −5 mA
VCE = −5 V, IC = −0.1 mA
VCE = −10 V, IC = −5 mA
VCB = −10 V, IE = 0, f = 1 MHz
Electrical Characteristics (Ta = 25°C) (Q2)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Input voltage (ON)
Input voltage (OFF)
Transition frequency
Collector output capacitance
Symbol
Test Condition
ICBO
ICEO
IEBO
hFE
VCE (sat)
VI (ON)
VI (OFF)
fT
Cob
VCB = 50 V, IE = 0
VCE = 50 V, IB = 0
VEB = 10 V, IC = 0
VCE = 5 V, IC = 10 mA
IC = 5 mA, IB = 0.25 mA
VCE = 0.2 V, IC = 5 mA
VCE = 5 V, IC = 0.1 mA
VCE = 10 V, IC = 5 mA
VCB = 10 V, IE = 0, f = 1 MHz
Electrical Characteristics (Ta = 25°C) (Q1, Q2 common)
Characteristics
Input resistor
Resistor ratio
Symbol
R1
R1/R2
Test Condition
RN4904FE
Min Typ. Max Unit
0.082
80
⎯ −0.1
1.5
1.0
200
3
100
500
0.15
0.3
5.0
1.5
6
nA
mA
V
V
V
MHz
pF
Min Typ.
0.082
80
0.1
1.5
1.0
250
3
Max
100
500
0.15
0.3
5.0
1.5
6
Unit
nA
mA
V
V
V
MHz
pF
Min Typ. Max Unit
32.9 47 61.1 kΩ
0.9 1.0 1.1
3
2007-11-01
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