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RN4902FE Просмотр технического описания (PDF) - Toshiba

Номер в каталогеКомпоненты Описаниепроизводитель
RN4902FE Transistor Silicon PNP NPN Epitaxial Type(PCT Process) (Bias Resistor Built-in Transistor) Toshiba
Toshiba Toshiba
RN4902FE Datasheet PDF : 6 Pages
1 2 3 4 5 6
Electrical Characteristics (Ta = 25°C) (Q1)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Input voltage (ON)
Input voltage (OFF)
Transition frequency
Collector output capacitance
Symbol
Test Condition
ICBO
ICEO
IEBO
hFE
VCE (sat)
VI (ON)
VI (OFF)
fT
Cob
VCB = −50 V, IE = 0
VCE = −50 V, IB = 0
VEB = −10 V, IC = 0
VCE = −5 V, IC = −10 mA
IC = −5 mA, IB = −0.25 mA
VCE = −0.2 V, IC = −5 mA
VCE = −5 V, IC = −0.1 mA
VCE = −10 V, IC = −5 mA
VCB = −10 V, IE = 0, f = 1 MHz
Electrical Characteristics (Ta = 25°C) (Q2)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Input voltage (ON)
Input voltage (OFF)
Transition frequency
Collector output capacitance
Symbol
Test Condition
ICBO
ICEO
IEBO
hFE
VCE (sat)
VI (ON)
VI (OFF)
fT
Cob
VCB = 50 V, IE = 0
VCE = 50 V, IB = 0
VEB = 10 V, IC = 0
VCE = 5 V, IC = 10 mA
IC = 5 mA, IB = 0.25 mA
VCE = 0.2 V, IC = 5 mA
VCE = 5 V, IC = 0.1 mA
VCE = 10 V, IC = 5 mA
VCB = 10 V, IE = 0, f = 1 MHz
Electrical Characteristics (Ta = 25°C) (Q1, Q2 common)
Characteristics
Input resistor
Resistor ratio
Symbol
R1
R1/R2
Test Condition
RN4902FE
Min Typ. Max Unit
0.32
50
1.2
1.0
0.1
200
3
100
500
0.71
0.3
2.4
1.5
6
nA
mA
V
V
V
MHz
pF
Min Typ. Max Unit
100
nA
500
0.38 0.71 mA
50
0.1 0.3
V
1.2
2.4
V
1.0
1.5
V
250
MHz
3
6
pF
Min Typ. Max Unit
7
10
13
kΩ
0.9 1.0 1.1
3
2007-11-01
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