RN4902FE View Datasheet(PDF) - Toshiba
Part Name
Description
View to exact match
RN4902FE Datasheet PDF : 6 Pages
| |||
Absolute Maximum Ratings (Ta = 25°C) (Q1)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
VCBO
VCEO
VEBO
IC
Rating
Unit
−50
V
−50
V
−10
V
−100
mA
RN4902FE
Absolute Maximum Ratings (Ta = 25°C) (Q2)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
VCBO
VCEO
VEBO
IC
Rating
Unit
50
V
50
V
10
V
100
mA
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 common)
Characteristics
Symbol
Rating
Unit
Collector power dissipation
PC (Note 1)
100
mW
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
−55~150
°C
Note:
Note 1:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Total rating
2
2007-11-01
|
|
Share Link: 