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FQP17N08L View Datasheet(PDF) - Fairchild Semiconductor

Part Name
Description
View to exact match
FQP17N08L
Fairchild
Fairchild Semiconductor Fairchild
FQP17N08L Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
Typical Characteristics
Top :
VGS
10.0 V
8.0 V
6.0 V
5.0 V
4.5 V
101
4.0 V
3.5 V
Bottom : 3.0 V
100
10-1
Notes :
1. 250μs Pulse Test
2. T = 25
C
100
101
V , Drain-Source Voltage [V]
DS
Figure 1. On-Region Characteristics
0.4
0.3
0.2
0.1
0.0
0
V = 5V
GS
V = 10V
GS
Note : TJ = 25
10
20
30
40
50
ID , Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
1100
1000
900
800
700
600
500
400
300
200
100
0
10-1
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
C
iss
C
oss
C
rss
Notes :
1. VGS = 0 V
2. f = 1 MHz
100
101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2000 Fairchild Semiconductor International
101
150
100
25
-55
Notes :
1. VDS = 25V
2. 250μs Pulse Test
10-1
0
2
4
6
8
10
V , Gate-Source Voltage [V]
GS
Figure 2. Transfer Characteristics
101
100
10-1
0.2
150
25
Notes :
1. VGS = 0V
2. 250μs Pulse Test
0.4
0.6
0.8
1.0
1.2
1.4
1.6
V , Source-Drain Voltage [V]
SD
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
10
V = 40V
DS
8
V = 64V
DS
6
4
2
Note : ID = 16.5A
0
0
2
4
6
8
10
12
14
16
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. A2, December 2000
 

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