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IRFP150N View Datasheet(PDF) - Intersil

Part NameDescriptionManufacturer
IRFP150N 44A, 100V, 0.030 Ohm, N-Channel Power MOSFET Intersil
Intersil Intersil
IRFP150N Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
IRFP150N
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ON STATE SPECIFICATIONS
BVDSS
IDSS
IGSS
ID = 250µA, VGS = 0V (Figure 11)
VDS = 95V, VGS = 0V
VDS = 90V, VGS = 0V, TC = 150oC
VGS = ±20V
Gate to Source Threshold Voltage
Drain to Source On Resistance
THERMAL SPECIFICATIONS
VGS(TH)
rDS(ON)
VGS = VDS, ID = 250µA (Figure 10)
ID = 44A, VGS = 10V (Figure 9)
Thermal Resistance Junction to Case
Thermal Resistance Junction to
Ambient
RθJC
RθJA
TO-247
SWITCHING SPECIFICATIONS (VGS = 10V)
Turn-On Time
tON
Turn-On Delay Time
td(ON)
Rise Time
tr
Turn-Off Delay Time
td(OFF)
Fall Time
tf
Turn-Off Time
tOFF
GATE CHARGE SPECIFICATIONS
VDD = 50V, ID = 44A
VGS = 10V,
RGS = 6.2
(Figures 18, 19)
Total Gate Charge
Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Gate to Drain "Miller" Charge
CAPACITANCE SPECIFICATIONS
Qg(TOT)
Qg(10)
Qg(TH)
Qgs
Qgd
VGS = 0V to 20V
VGS = 0V to 10V
VGS = 0V to 2V
VDD = 50V,
ID = 44A,
Ig(REF) = 1.0mA
(Figures 13, 16, 17)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS = 25V, VGS = 0V,
f = 1MHz
(Figure 12)
Source to Drain Diode Specifications
PARAMETER
SYMBOL
Source to Drain Diode Voltage
VSD
Reverse Recovery Time
Reverse Recovered Charge
trr
QRR
TEST CONDITIONS
ISD = 44A
ISD = 22A
ISD = 44A, dISD/dt = 100A/µs
ISD = 44A, dISD/dt = 100A/µs
MIN TYP MAX UNITS
100
-
-
V
-
-
1
µA
-
-
250
µA
-
-
±100 nA
2
-
4
V
-
0.0255 0.030
-
-
0.97 oC/W
-
-
30
oC/W
-
-
130
ns
-
11
-
ns
-
75
-
ns
-
37
-
ns
-
61
-
ns
-
-
150
ns
-
90
108
nC
-
48
58
nC
-
3.1
3.8
nC
-
6.5
-
nC
-
17
-
nC
-
1700
-
pF
-
460
-
pF
-
145
-
pF
MIN TYP MAX UNITS
-
-
1.25
V
-
-
1.00
V
-
-
105
ns
-
-
305
nC
2
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