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GS1D_02 View Datasheet(PDF) - Won-Top Electronics

Part Name
Description
View to exact match
GS1D_02 Datasheet PDF : 3 Pages
1 2 3
W TE
POWER SEMICONDUCTORS
GS1A – GS1M
1.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER
Features
! Glass Passivated Die Construction
! Ideally Suited for Automatic Assembly
B
! Low Forward Voltage Drop
! Surge Overload Rating to 30A Peak
! Low Power Loss
A
! Built-in Strain Relief
! Plastic Case Material has UL Flammability
Classification Rating 94V-O
C
D
F
HG
E
Mechanical Data
! Case: Molded Plastic
! Terminals: Solder Plated, Solderable
per MIL-STD-750, Method 2026
! Polarity: Cathode Band or Cathode Notch
! Marking: Type Number
! Weight: 0.064 grams (approx.)
SMA/DO-214AC
Dim
Min
Max
A
2.50
2.90
B
4.00
4.60
C
1.40
1.60
D
0.152
0.305
E
4.80
5.28
F
2.00
2.44
G
0.051
0.203
H
0.76
1.52
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current @TL = 100°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
Forward Voltage
@IF = 1.0A
Peak Reverse Current
At Rated DC Blocking Voltage
@TA = 25°C
@TA = 125°C
Reverse Recovery Time (Note 1)
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
Operating and Storage Temperature Range
Symbol GS1A GS1B GS1D GS1G GS1J GS1K GS1M Unit
VRRM
VRWM
VR
50
100 200 400 600 800 1000 V
VR(RMS)
35
70
140 280 420 560 700 V
IO
1.0
A
IFSM
30
A
VFM
IRM
trr
Cj
RJL
Tj, TSTG
1.10
V
5.0
200
µA
2.5
µS
15
pF
30
K/W
-65 to +175
°C
Note: 1. Measured with IF = 0.5A, IR = 1.0A, Irr = 0.25A,
2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.
3. Mounted on P.C. Board with 8.0mm2 land area.
GS1A – GS1M
1 of 3
© 2002 Won-Top Electronics
 

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