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RFP6P10 View Datasheet(PDF) - Intersil

Part NameRFP6P10 Intersil
Intersil Intersil
Description-6A, -80V and -100V, 0.600 Ohm, P-Channel Power MOSFETs
RFP6P10 Datasheet PDF : 5 Pages
1 2 3 4 5
RFP6P08, RFP6P10
Test Circuits and Waveforms (Continued)
RL
DUT
RG
VGS
-
VDD
+
FIGURE 13. SWITCHING TIME TEST CIRCUIT
tON
td(ON)
tr
0
10%
tOFF
td(OFF)
tf
10%
VDS
VGS
0
90%
10%
50%
PULSE WIDTH
90%
50%
90%
FIGURE 14. RESISTIVE SWITCHING WAVEFORMS
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site www.intersil.com
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5
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These are P-Channel enhancement mode silicon gate power field effect transistors designed for high speed applications such as switching regulators, switching convertors, relay drivers, and drivers for high power bipolar switching transistors.
Formerly developmental type TA09046.

Features
• -6A, -80V and -100V
• rDS(ON) = 0.600Ω
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
   - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”

 

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