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RFP6P10 View Datasheet(PDF) - Intersil

Part NameRFP6P10 Intersil
Intersil Intersil
Description-6A, -80V and -100V, 0.600 Ohm, P-Channel Power MOSFETs
RFP6P10 Datasheet PDF : 5 Pages
1 2 3 4 5
RFP6P08, RFP6P10
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current
RMS Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 (for TO-220AB) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
RFP6P08
80
80
RFP6P10
100
100
6
20
±20
60
0.48
-55 to 150
6
20
±20
60
0.48
-55 to 150
300
300
260
260
UNITS
V
V
A
A
V
W
W/oC
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
RFP6P08
BVDSS ID = 250µA, VGS = 0V
RFP6P10
Gate Threshold Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Drain to Source On Voltage (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse-Transfer Capacitance
Thermal Resistance Junction to Case
VGS(TH)
IDSS
IGSS
rDS(ON)
VDS(ON)
td(ON)
tr
td(OFF)
tf
CISS
COSS
CRSS
RθJC
VGS = VDS, ID = 250µA (Figure 7)
VDS = Rated BVDSS
VDS = 0.8 x Rated BVDSS (TC = 125oC)
VGS = ±20V, VDS = 0V
ID = 6A, VGS = -10V (Figures 5, 6)
ID = 6A, VGS = -10V
VDD = 50V, ID 6A
RG = 50, RL = 16
VGS = -10V
(Figures 13, 14)
VDS = 25V
VGS = 0V
f = 1MHz
(Figure 8)
RFP6P08, RFP6P10
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
Source to Drain Diode Voltage (Note 2)
VSD ISD = -3A
Reverse Recovery Time
trr
ISD = 4A, dlSD/dt = 50A/µs
NOTES:
2. Pulse Test: Pulse Duration 300µs max, Duty Cycle 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature.
MIN TYP MAX UNITS
-80
-100
-2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
V
-
-
V
-
-4
V
-
1
µA
-
25
µA
-
±100 nA
-
0.6
-
-3.6
V
11
60
ns
48
100
ns
102 150
ns
70
100
ns
-
800
pF
-
350
pF
-
150
pF
-
2.083 oC/W
MIN TYP MAX UNITS
-
-
-1.4
V
-
150
-
ns
2
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These are P-Channel enhancement mode silicon gate power field effect transistors designed for high speed applications such as switching regulators, switching convertors, relay drivers, and drivers for high power bipolar switching transistors.
Formerly developmental type TA09046.

Features
• -6A, -80V and -100V
• rDS(ON) = 0.600Ω
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
   - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”

 

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