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RFP6P10 View Datasheet(PDF) - Intersil

Part NameDescriptionManufacturer
RFP6P10 -6A, -80V and -100V, 0.600 Ohm, P-Channel Power MOSFETs Intersil
Intersil Intersil
RFP6P10 Datasheet PDF : 5 Pages
1 2 3 4 5
RFP6P08, RFP6P10
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current
RMS Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 (for TO-220AB) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
RFP6P08
80
80
RFP6P10
100
100
6
20
±20
60
0.48
-55 to 150
6
20
±20
60
0.48
-55 to 150
300
300
260
260
UNITS
V
V
A
A
V
W
W/oC
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
RFP6P08
BVDSS ID = 250µA, VGS = 0V
RFP6P10
Gate Threshold Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Drain to Source On Voltage (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse-Transfer Capacitance
Thermal Resistance Junction to Case
VGS(TH)
IDSS
IGSS
rDS(ON)
VDS(ON)
td(ON)
tr
td(OFF)
tf
CISS
COSS
CRSS
RθJC
VGS = VDS, ID = 250µA (Figure 7)
VDS = Rated BVDSS
VDS = 0.8 x Rated BVDSS (TC = 125oC)
VGS = ±20V, VDS = 0V
ID = 6A, VGS = -10V (Figures 5, 6)
ID = 6A, VGS = -10V
VDD = 50V, ID 6A
RG = 50, RL = 16
VGS = -10V
(Figures 13, 14)
VDS = 25V
VGS = 0V
f = 1MHz
(Figure 8)
RFP6P08, RFP6P10
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
Source to Drain Diode Voltage (Note 2)
VSD ISD = -3A
Reverse Recovery Time
trr
ISD = 4A, dlSD/dt = 50A/µs
NOTES:
2. Pulse Test: Pulse Duration 300µs max, Duty Cycle 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature.
MIN TYP MAX UNITS
-80
-100
-2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
V
-
-
V
-
-4
V
-
1
µA
-
25
µA
-
±100 nA
-
0.6
-
-3.6
V
11
60
ns
48
100
ns
102 150
ns
70
100
ns
-
800
pF
-
350
pF
-
150
pF
-
2.083 oC/W
MIN TYP MAX UNITS
-
-
-1.4
V
-
150
-
ns
2
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