RFP6P10 View Datasheet(PDF) - Intersil

Part Name

Description

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RFP6P10

-6A, -80V and -100V, 0.600 Ohm, P-Channel Power MOSFETs

Intersil 

Data Sheet

RFP6P08, RFP6P10

October 1999 File Number 1490.2

-6A, -80V and -100V, 0.600 Ohm,

P-Channel Power MOSFETs

These are P-Channel enhancement mode silicon gate

power field effect transistors designed for high speed

applications such as switching regulators, switching

convertors, relay drivers, and drivers for high power bipolar

switching transistors.

Formerly developmental type TA09046.

Ordering Information

PART NUMBER

PACKAGE

BRAND

RFP6P08

TO-220AB

RFP6P08

RFP6P10

TO-220AB

RFP6P10

NOTE: When ordering, include the entire part number.

Features

• -6A, -80V and -100V

• rDS(ON) = 0.600Ω

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Majority Carrier Device

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Symbol

D

G

S

Packaging

JEDEC TO-220AB

SOURCE

DRAIN

GATE

DRAIN

(FLANGE)

1

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999

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