PKC-136 View Datasheet(PDF) - STMicroelectronics

Part Name

Description

View to exact match

PKC-136

PEAK CLAMP

STMicroelectronics 

PKC-136

ELECTRICAL CHARACTERISTICS TRANSIL

Symbol

Parameter

Test conditions

Value

Unit

Min. Typ. Max.

IRM

VBR

Rd

αT

VsCL

Leakage current

VR = 136V

Tj = 25°C

Tj =125°C

1

µA

10

Breakdown voltage

IR = 1mA

pulse test < 50ms

Tj = 25°C 150 160 170 V

Dynamical Resistance

Temperature

Coefficient

tp < 500ns

between I = 0.5Amps

and I = 1.5Amps

Tj = 125°C

4

Ω

10.8 10-4/°C

Surge Clamping

voltage

Ipp = 2.7Amps

10/1000µs

219 V

CALCULATION OF THE CLAMPING VOLTAGE:

In repetitive mode and for low current rating, use the equation (1) and (2) to calculate the breakdown

voltage VBR of the transil versus the operating junction temperature and use the equation (3) to calculate

the clamping voltage versus the transil current Ipp and the temperature.

∆VBR = αT (Tj − 25)VBR ( 25°C ) (1)

VBR (Tj ) = VBR ( 25°C ) + ∆VBR

(2)

VCL(Tj ) = VBR (Tj ) + Rd .Ipp

(3)

ELECTRICAL CHARACTERISTICS DIODE (Tj = 25°C unless otherwise specified)

Symbol

IR

VRRM

trr

VFP

Parameter

Reverse leakage current

Repetitive Peak Reverse

Voltage

Reverse Recovery Time

Peak Forward Voltage

Tests conditions

VR = VRRM

Tj = 25°C

Tj = 25°C

Tj = 125°C

IF = 1A dIF / dt = -50A/µs

VR = 30V

IF = 3A

Tj = 25°C

dIF / dt = 100A/µs Tj = 125°C

Min.

700

Value

Typ.

3

Max.

3

20

45

12

18

Unit

µA

V

ns

V

CAPACITANCE

Symbol

Parameter

C

Total Parasitic capacitance 1MHz 30mV

Typical Value

Unit

35

pF

2/5

Share Link: